FACTS ABOUT GERMANIUM REVEALED

≤ 0.15) is epitaxially grown with a SOI substrate. A thinner layer of Si is grown on this SiGe layer, and afterwards the composition is cycled by way of oxidizing and annealing levels. A result of the preferential oxidation of Si more than Ge [68], the initial Si1–has determined quite a few experiments to search out alternate passivation proced